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Defects in CdTe-Based Photodetectors

Published online by Cambridge University Press:  10 February 2011

V. Valdna
V. Valdna*
Affiliation:
IMT, Tallinn Technical University, Tallinn, 5 Ehitajate Rd., 19086 Estonia, vellov@hot.ee
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Abstract

The photoluminescence spectra, defect composition and optoelectronic properties of chlorine doped CdTe monocrystals, thick layers and thin films are investigated. It is supposed that the complex defect (VCd-2ClTe) is a neutral defect that causes high resistivity of Cl doped CdTe. This complex can dissociate into two charged defects (VCd-ClTe) and ClTe at 300 K. Acentre (VCd-ClTe) is a stable defect that is responsible for p-type conductivity of Cl doped CdTe. Depending on the C1 concentration high resistivity, high photoconductivity or high p-type conductivity can be formed in CdTe that is only chlorine doped.

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