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Defects in Microcrystalline Silicon Prepared With Hot Wire CVD

Published online by Cambridge University Press:  01 February 2011

F. Finger,
S. Klein,
T. Dylla,
A. L. Baia Neto,
O. Vetterl and
R. Carius
F. Finger
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany
S. Klein
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany
T. Dylla
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany
A. L. Baia Neto
Affiliation:
Depto. de Química, Universidade Federal Rural do Rio de Janeiro, Seropédica, RJ, Brazil
O. Vetterl
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany
R. Carius
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany
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Abstract

The influence of the preparation conditions in hot wire chemical vapour deposition (HWCVD) on the electronic properties of microcrystalline silicon is investigated in view of application of the material in thin film solar cells. Poor grain boundary passivation, as a result of hydrogen etching at strong hydrogen dilution of the process gas or thermal desorption of hydrogen at high deposition temperatures, is considered a main obstacle for material optimisation. We conclude that optimum μc-Si:H solar cell material, both from HW-CVD and from plasma enhanced CVD, is not necessarily obtained with largest grain sizes and apparent highest crystalline content, but rather by a material prepared under conditions which yield a compact morphology with an effective grain boundary passivation.

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