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Diffuse X-Ray Scattering for the Study of Defects in Silicon*

Published online by Cambridge University Press:  15 February 2011

BC Larson and
JF Barhorst
BC Larson
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830, USA
JF Barhorst
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830, USA
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Abstract

X-ray diffuse scattering can be used to study the size, concentration, and nature of lattice defects and defect clusters in crystalline materials. The availability of analytical models and detailed numerical calculations for the “Huang” diffuse scattering close to Bragg reflections and the “asymptotic” diffuse scattering at somewhat larger distances from Bragg reflections has made it possible to carry out detailed analyses of the intensity and angular distribution of the diffuse scattering in terms of specific defect parameters. Accordingly, diffuse scattering has been used to study point defects, dislocation loops, and precipitates in metals, semiconductors, and insulators and has provided information on defect geometries, size distributions, and concentrations. In this paper, the theoretical framework necessary for the interpretation of the “Huang” and “asymptotic” diffuse scattering from defect clusters is presented and examples of diffuse scattering calculations for defects in silicon are given. Diffuse scattering from clustered defects in silicon is discussed in terms of the type of information available from this scattering and the relative merits of diffuse scattering as an investigative tool for defect clusters. Diffuse scattering analysis techniques for the determination of separate size distributions for vacancy and interstitial dislocation loops in silicon are presented and applied to diffuse scattering measurements on neutron irradiated silicon. Dislocation loop densities and sizes determined in the as-irradiated state and after thermal anneals are compared with electron microscopy results.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980, 151
Copyright
Copyright © Materials Research Society 1981

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W–7405–eng–26 with Union Carbide Corporation.

References

REFERENCES

1. Dederichs, P. H., J. Phys. F 3, 471 (1973).Google Scholar
2. Trinkaus, H., Phys. Status Solidi (b) 54, 209 (1972).Google Scholar
3. Ehrhart, P., Haubold, H. -G., and Schilling, W., Advances in Solid State Research, 14, 84 (1974).Google Scholar
4. Haubold, H. -G. and Martinsen, D., J. Nucl. Mat. 69–70, 644 (1978).Google Scholar
5. Peisl, H., J. Appl. Cryst. 8, 643 (1975).Google Scholar
6. Larson, B. C., in Fundamental Aspects of Radiation Damage, ed. by Robinson, M. T. and Young, F. W. Jr, ERDA CONF–75 1006–Pl, Oak Ridge, TN, 1976, p. 820.Google Scholar
7. Larson, B. C. and Young, F. W. Jr., J. Appl. Phys. 48, 880 (1977).Google Scholar
8. Larson, B. C. and Schmatz, W., Phys. Rev. B10, 2307 (1974).Google Scholar
9. Pankratz, J. M., Sprague, J. A., and Rudee, M. L., J. Appl. Phys. 39, 101 (1968).Google Scholar
10. Hemment, P. L. F. and Gunnerson, E. M., J. Appl. Phys. 37, 2912 (1966).Google Scholar
11. Baldwin, T. O. and Thomas, J. E., J. Appl. Phys. 39, 4391 (1968).Google Scholar
12. Larson, B. C., Young, R. T., and Narayan, J., in Neutron Transmutation Doping in Semiconductors, ed. by Meese, J. M. (Plenum Press, New York 1979) p. 281.Google Scholar
13. Trinkaus, H., Phys. Status Solidi 51, 307 (1972).Google Scholar
14. Larson, B. C. and Schmatz, W., Phys. Status Solidi 99, 267 (1980).CrossRefGoogle Scholar
15. Trinkaus, H., Angew, Z., Phys. 31, 229 (1971).Google Scholar
16. Cleland, J. W., Fleming, P. H., Westbrook, R. D., Wood, R. F., and Young, R. T., reference 12, p. 261.Google Scholar
17. Ohr, S. M., Phys. Status Solidi (b) 64, 317 (1974).Google Scholar
18. Ehrhart, P., Larson, B. C., and Trinkaus, H. (to be published).Google Scholar
19. Corbet, J. W., Bourgoin, J. C., Cheng, L. J., Correlli, J. C., Lee, Y. H., Mooney, P. M., and Weigel, C., Radiation Damage and Defects in Semiconductors (Inst. Phys. Conf. Ser. 31) p. 1.Google Scholar