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Diffusion and Subsurface Bonding of Hydrogen in Silicon

Published online by Cambridge University Press:  26 February 2011

A. E. Jaworowski and
L. S. Wielunski
A. E. Jaworowski
Affiliation:
Department of Physics, Wright State University, Dayton, OH 45435, USA
L. S. Wielunski
Affiliation:
Department of Physics, SUNY at Albany, Albany, NY 12222, USA
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Abstract

The hydrogen depth profiling in the near-surface region in silicon reveals the existence of a subsurface hydrogen layer. This layer acts as a barrier to diffusion. The observed subsurface hydrogen profile rises and then drops off sharply with increasing depth and is stable up to 770 K. Our annealing data indicate a rather complex motion of monatomic and molecular hydrogen in the near-surface region (<1500 A) in the temperature range 300 – 800 K. The subsurface molecule formation represents the dominant hydrogen trapping process in silicon.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987, 305
Copyright
Copyright © Materials Research Society 1988

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Footnotes

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Present address: CSIRO, Div.Mat.Sc.Tech., Menai, NSW 2234, Australia

References

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