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Dimerization on GaN(001) Surfaces

Published online by Cambridge University Press:  01 January 1992

Min-Hsiung Tsai and
John D. Dow
Min-Hsiung Tsai
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504, U.S.A.
John D. Dow
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504, U.S.A.
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Abstract

The GaN(OOl) surface is polar with either N- or Ga-termination. We predict that the Ga-terminated surface does not dimerize, but instead the surface Ga atoms relax into the vacuum by about ≈0.38 Å. The N-terminated surface is predicted to form a c(2×4) structure with N2 dimers in rows of length two. This is to be contrasted with the (2×1) Si(001) surface, on which the dimer rows are infinitely long, and with the (2×4) GaAs(OO1) surface, on which the rows are three dimers long.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 291: Symposium O – Materials Theory and Modeling , 1992, 309
Copyright
Copyright © Materials Research Society 1993

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References

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