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Direct Electron Beam Processing Of Semiconductor Nanostructures

Published online by Cambridge University Press:  01 February 2011

Yeonjoon Park ,
Rian Zhao ,
Petra Specht  and
Eicke R. Weber
Yeonjoon Park
Affiliation:
Department of Materials Science Engineering, U.C.Berkeley Berkeley, CA 94720, U.S.A.
Rian Zhao
Affiliation:
Department of Materials Science Engineering, U.C.Berkeley Berkeley, CA 94720, U.S.A.
Petra Specht
Affiliation:
Department of Materials Science Engineering, U.C.Berkeley Berkeley, CA 94720, U.S.A.
Eicke R. Weber
Affiliation:
Department of Materials Science Engineering, U.C.Berkeley Berkeley, CA 94720, U.S.A.
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Abstract

We used a high current density focused electron beam to modify a GaAs substrate. To avoid any oxidation or carbon contamination problem, an in-situ electron gun, combined with III-V molecular beam epitaxy (MBE) machine, was used. By changing the substrate temperature and the electron beam dwell time on each spot, different sizes of thermal irradiation marks were created. Fabricated spot-diameters in the sub-micrometer range suggest the possible utilization of this process for novel applications with the MBE growth technique.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 727: Symposium R – Nanostructured Interfaces , 2002 , R11.11
Copyright
Copyright © Materials Research Society 2002

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