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Dislocation-Induced Surface Strain on (001) Silicon-On-Insulator

Published online by Cambridge University Press:  10 February 2011

P. Sutter and
M.G. Lagally
P. Sutter
Affiliation:
University of Wisconsin-Madison, Madison, WI 53706
M.G. Lagally
Affiliation:
University of Wisconsin-Madison, Madison, WI 53706
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Abstract

We demonstrate a novel technique, based on low-energy electron microscopy, by which inhomogeneous uniaxial strain at the (001) surface of Si can be mapped quantitatively. Using this technique on silicon-on-insulator wafers, we determine the surface strain field induced by a single 60° dislocation and show that such extended defects can be used as monitors of heteroepitaxy-induced changes in the surface strain.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999, 235
Copyright
Copyright © Materials Research Society 1999

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References

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