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Dislocations as Growth Step Sources in Solution Growth and Their Influence on Interface Structures

Published online by Cambridge University Press:  15 February 2011

E. Bauser and
H. Strunk
E. Bauser
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80 (F.R.G.)
H. Strunk
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Physik, Heisenbergstrasse 1, D-7000 Stuttgart 80 (F.R.G.)
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Extract

High voltage electron microscopy of silicon and GaAs layers grown by liquid phase epitaxy shows that two types of growth step sources are present. These consist of single dislocations with or without a Burgers vector component parallel to the macroscopic growth direction (longitudinal or transverse step sources respectively). A simple model is used to illustrate in particular the efficient nucleation of growth steps at transverse sources. Suitably positioned dislocations create morphologically stable patterns of equidistant widely spaced surface steps with monatomic height on otherwise atomically flat surfaces. Such growth surfaces result in interfaces with minimum disorder in multilayer growth.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 10: Symposium C – Thin Films and Interfaces I , 1981, 189
Copyright
Copyright © Materials Research Society 1982

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References

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