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Dopant Diffusion and Grain Growth in Arsenic-Implanted Poly-Si

Published online by Cambridge University Press:  22 February 2011

L. R. Zheng,
L. S. Hung and
J. W. Mayer
L. R. Zheng
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
L. S. Hung
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
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Abstract

The diffusion behavior of arsenic and the grain growth of Si in arsenic doped poly-Si were investigated by MeV4 He2+ backscattering techniques and transmission electron microscopy. By implanting arsenic ions into poly-Si films the surface portion was made amorphous and crystallized upon annealing. In-situ mssurements showed crystal nucleation and growth at temperatures of 650 – 700° C with a dimension comparable to the thickness of the amorphous layer. Annealing at temperatures up to 850°C increased the number of the large grains, but the average grain size did not change significantly. In the unimplanted region grains retained their initial size until 885°C, although implanted arsenic was found to diffuse into this region along grain boundaries. At 885°C penetration of arsenic into the interior of grains caused significant grain growth. We also found that single implants of boron somewhat increased grain size, whereas boron codoped with arsenic appeared to reduce the effect of arsenic doping. These observations support the hypothesis that the enhanced growth rate and the electrical activity of Si near the grain boundary are closely interrelated.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987, 135
Copyright
Copyright © Materials Research Society 1988

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References

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