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Dopant Diffusion Simulation in Thin-SOI

Published online by Cambridge University Press:  01 February 2011

Hong-Jyh Li,
Robin Tichy,
Jonathon Ross,
Jeff Gelpey,
Ben Stotts and
Heather Galloway
Hong-Jyh Li
Affiliation:
Larry Larson International SEMATECH, 2706 Montopolis Dr., Austin, TX 78741
Robin Tichy
Affiliation:
Larry Larson International SEMATECH, 2706 Montopolis Dr., Austin, TX 78741
Jonathon Ross
Affiliation:
Vortek Industries Ltd, 605 West Kent Avenue, Vancouver, BC Canada V6P 6T7
Jeff Gelpey
Affiliation:
Vortek Industries Ltd, 605 West Kent Avenue, Vancouver, BC Canada V6P 6T7
Ben Stotts
Affiliation:
Southwest Texas State University, San Marcos, Texas
Heather Galloway
Affiliation:
Southwest Texas State University, San Marcos, Texas
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Abstract

As the top Si layer is thinned, the dopants' diffusion in the confined Si layer in SOI wafer with respect to different thermal treatments needs to be better understood. Boron, BF2 with/without Ge pre-amorphization were implanted into bulk Si and SOI wafers with 530 Å Si and 1475A BOX. Samples were annealed using both spike (Impulse) anneal and Flash anneal. Simulations of dopant diffusion is used to resolve apparent differences in dopant profiles that resulted for SOI in contrast with bulk Si samples. Result suggests that the implantation damage difference between SOI and bulk Si makes the B diffusion in SOI higher than in bulk Si.

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References

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