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Dopant Redistribution in Titanium Silicide/n+ Polysilicon Bilayers During Rapid Thermal Processing

Published online by Cambridge University Press:  22 February 2011

C. B. Cooper III,
R. A. Powell and
R. Chow
C. B. Cooper III
Affiliation:
Varian Associates, Inc., Corporate Solid State Laboratory 611 Hansen Way, Palo Alto, CA 94303
R. A. Powell
Affiliation:
Varian Associates, Inc., Corporate Solid State Laboratory 611 Hansen Way, Palo Alto, CA 94303
R. Chow
Affiliation:
Varian Associates, Inc., Corporate Solid State Laboratory 611 Hansen Way, Palo Alto, CA 94303
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Abstract

The successful use of rapid thermal processing in an isothermal mode to form Ti polycide structures is described. The silicide was sputter deposited from a composite Ti-Si target onto phosphorus-doped poly-Si. The resulting polycide structure was annealed by exposure to the blackbody radiation from a resistively-heated graphite heater. Rapid diffusion of the P into the Ti silicide is observed even for short annealing times, although resulting P concentrations in the silicide (>7 × 1018cm−3) are relatively low, about 100 times lower than in the doped poly-Si. Properly chosen RTP parameters can minimize the sheet resistance of the polycide without increasing the sheet resistance of the underlying poly-Si layer, which has not been possible for furnace-annealed samples.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983, 739
Copyright
Copyright © Materials Research Society 1984

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References

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