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Dopants in HgCdTe

Published online by Cambridge University Press:  10 February 2011

M. A. Berding and
A. Sher
M. A. Berding
Affiliation:
Applied Physical Sciences Laboratory, SRI International, 333 Ravenswood Ave., Menlo Park, CA 94025, marcy@plato.sri.com
A. Sher
Affiliation:
Applied Physical Sciences Laboratory, SRI International, 333 Ravenswood Ave., Menlo Park, CA 94025, marcy@plato.sri.com
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Abstract

In this paper we discuss our ab initio calculations of native point defect and impurity densities in HgCdTe. Our calculations have explained the experimental finding in general, and in particular have explained the in-active incorporation of the group VII elements under mercury-deficient conditions; have shown that the group I elements have a large fraction of interstitial incorporation, thereby explaining their fast diffusion; and have described a microscopic mechanism for the amphoteric behavior of the group V elements. We discuss the trends found among the compounds in terms of the underlying bond strengths to understand why the various elements behave the way they do.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997, 341
Copyright
Copyright © Materials Research Society 1998

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