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Effect of Cl in Gate Oxidation

Published online by Cambridge University Press:  10 February 2011

P. W. Mertens,
M. J. McGeary,
M. Schaekers,
H. Sprey,
B. Vermeire,
M. Depas,
M. Meuris and
M. M. Heyns
P. W. Mertens
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, mertensp@imec.be
M. J. McGeary
Affiliation:
Olin, 350 Knotter Drive, Cheshire, CT, USA
M. Schaekers
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, mertensp@imec.be
H. Sprey
Affiliation:
ASM Europe, Rembrandtlaan 7-9, 3723 BG Bilthoven, The Netherlands
B. Vermeire
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, mertensp@imec.beUniversity of Arizona, Tucson, AZ, USA
M. Depas
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, mertensp@imec.be
M. Meuris
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, mertensp@imec.be
M. M. Heyns
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, mertensp@imec.be
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Abstract

The present study reviews the use of Cl in gate oxidation furnaces for growth of high quality gate oxides with a thickness in the range of 2 to 15 1nm. The following, commercially available, “state of the art” Cl-precursors have been tested: 1,1,1- trichloroethane (TCA), trans-1,2-dichloroethylene (DCE) and oxalyl chloride (OC). Different parameters were evaluated including: metal removal efficiency, poly-silicon haze, Fe bulk incorporation, carrier lifetime and Cl-incorporation in the oxide. Cl2 was identified as the active component in Cl-oxidation. As a consequence, OC was identified as being the most efficient Cl-source. In particular, OC is the most suited Cl-source for applications requiring reduced oxygen concentration, such as the manufacturing of ultra thin gate oxides.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997, 89
Copyright
Copyright © Materials Research Society 1997

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References

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