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The Effect of Oxygen on Diffusion and Compounding at Ni-GaAs(100) Interfaces

Published online by Cambridge University Press:  22 February 2011

J. S. Solomon,
D. R. Thomas and
S. R. Smith
J. S. Solomon
Affiliation:
University of Dayton Research Institute, 300 College Park, Avenue Dayton, Ohio 45469
D. R. Thomas
Affiliation:
University of Dayton Research Institute, 300 College Park, Avenue Dayton, Ohio 45469
S. R. Smith
Affiliation:
University of Dayton Research Institute, 300 College Park, Avenue Dayton, Ohio 45469
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Abstract

The effects of the presence of surface oxides and oxygen incorporated in deposited Ni films on intermixing and compounding at Ni/GaAs(100) interfaces was investigated with Auger sputter profile analysis. The Ni/GaAs structures were heated in vacuum with a high intensity incoherent lamp. Chemical changes and compound distributions were extracted from profile data by factor analysis of the Auger peaks. Diffusion coefficients for Ni at different temperatures were obtained from profile concentration gradients. The results showed that Ni diffusion was faster and activation energy lower for clean versus oxide covered GaAs substrates. Without the presence of oxygen, Ni2 GaAs readily formed at 300°C while with oxygen, the formation of Ni-Ga and Ni-As compounds prevailed over the formation of a distinct Ni2 GaAs layer.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985, 191
Copyright
Copyright © Materials Research Society 1985

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References

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