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Effect of Surface and Grain-Boundary Diffusion on Interconnect Reliability

Published online by Cambridge University Press:  15 February 2011

L. M. Klinger,
E. E. Glickman,
V. E. Fradkov,
W. W. Mullins and
C. L. Bauer
L. M. Klinger
Affiliation:
The Technion, Haifa, Israel
E. E. Glickman
Affiliation:
The Hebrew University, Jerusalem, Israel
V. E. Fradkov
Affiliation:
Rensselaer Polytechnic Institute, Troy, New York, USA
W. W. Mullins
Affiliation:
Carnegie Mellon University, Pittsburgh, Pennsylvania, USA
C. L. Bauer
Affiliation:
Carnegie Mellon University, Pittsburgh, Pennsylvania, USA
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Abstract

The effect of surface and grain-boundary diffusion on interconnect reliability is addressed by extending the theory of thermal grooving to arbitrary grain-boundary flux. For a periodic array of grain boundaries, three regimes are identified: (1) equilibrium, (2) global steady state, and (3) local steady state. These regimes govern the stability of polycrystalline materials subjected to large electric (electromigration) or mechanical (stress voiding) fields, especially in thin films where grain size approximates film thickness.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995, 295
Copyright
Copyright © Materials Research Society 1995

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