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Effects in Silicon Explained by Atomic Hydrogen

Published online by Cambridge University Press:  26 February 2011

A. Schnegg,
H. Prigge,
M. Grundner,
P. O. Hahn and
H. Jacob
A. Schnegg
Affiliation:
Wacker-Chemitronic GmbH, Research Center, D-8263 Burghausen, FRG
H. Prigge
Affiliation:
Wacker-Chemitronic GmbH, Research Center, D-8263 Burghausen, FRG
M. Grundner
Affiliation:
Wacker-Chemitronic GmbH, Research Center, D-8263 Burghausen, FRG
P. O. Hahn
Affiliation:
Wacker-Chemitronic GmbH, Research Center, D-8263 Burghausen, FRG
H. Jacob
Affiliation:
Wacker-Chemitronic GmbH, Research Center, D-8263 Burghausen, FRG
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Abstract

The chemomechanical polishing mechanism is described as a corrosive attack of water forming Si-H and Si-OH groups. By adding ammonia or amines to the slurry we observe an irlfease of the resistivity corresponding to a neutralization of up to 1 × 1017 acceptor atoms cm−3 in the case of p-type silicon, whereas n-type silicon can show a slight reduction in resistivity due to the neutralization of the residual acceptor concentration.

SIMS measurements show the presence of hydrogen in the bulk. Using deuterium instead of hydrogen, a correlation could be established between the deuterium content of the wafer, measured by the effusion technique, and the degree of the acceptor compensation.

As can be shown by resistivity and C/V-measurements, under the conditions of polishing the supposed inactivator hydrogen migrates to a distance finally corresponding to the thickness of a wafer. This is contrary to the comm on method of plasma treatment, where a damaged silicon layer is supposed to act as a barrier to the hydrogen diffusion. Differences in the IR spectra can be explained this way.

Crystal imperfections in the bulk and on the surface influences the migration of hydrogen essentially.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987, 291
Copyright
Copyright © Materials Research Society 1988

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References

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