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Electrical Characterization of BCB for Electrostatic Microelectromechanical Devices

Published online by Cambridge University Press:  01 February 2011

Alireza Modafe,
Nima Ghalichechian,
Benjamin Kleber and
Reza Ghodssi
Alireza Modafe
Affiliation:
Department of Electrical and Computer Engineering and Institute for Systems Research University of Maryland, College Park, MD 20742, U.S.A.
Nima Ghalichechian
Affiliation:
Department of Electrical and Computer Engineering and Institute for Systems Research University of Maryland, College Park, MD 20742, U.S.A.
Benjamin Kleber
Affiliation:
Department of Electrical and Computer Engineering and Institute for Systems Research University of Maryland, College Park, MD 20742, U.S.A.
Reza Ghodssi
Affiliation:
Department of Electrical and Computer Engineering and Institute for Systems Research University of Maryland, College Park, MD 20742, U.S.A.
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Abstract

Electrical properties and thickness of insulating dielectric films directly affect electrical energy loss and electrical breakdown limit in electric micromachines. A thick, low-k film exhibits low parasitic capacitive effects that help with the reduction of electrical energy loss. The electrical performance can be deteriorated due to degradation of the electrical properties of the insulating dielectric material caused by process, device structure, and moisture. In this paper, we introduce the application of CYCLOTENE, a spin-on, low-k, BCB-based polymer in electric micromachines as insulating layer and interlevel dielectric. A novel approach using interdigitated capacitors for electrical characterization of CYCLOTENE and the effect of moisture absorption is introduced in this paper. The dielectric constant of CYCLOTENE is extracted from two steps of capacitance measurements, giving an average value of 2.49 with a standard deviation of 1.5 %. The dielectric constant increases by 1.2 % after a humidity stress of 85 %RH at 85 °C. The measured I-V characteristics of CYCLOTENE show a dependency of the breakdown strength and leakage current on the geometrical dimensions of the device under test. A breakdown strength of 225 V/μm for 2 μm finger spacing and 320 V/μm for 3 μm finger spacing, and a leakage current of a few to tens of pA are measured. The I-V characteristics degrades drastically after a humidity stress of 85 %RH at 85 °C, showing a breakdown strength of 100 V/μm for 2 μm finger spacing and 180 V/μm for 3 μm finger spacing. Based on the results of this study, it is expected that the electrical efficiency of an electric micromachine is improved using BCB-based polymers with negligible dependency on moisture absorption. On the other hand, the maximum performance that depends on the maximum operating voltage is adversely affected by the degradation of the breakdown voltage after moisture absorption.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 782: Symposium A – Micro- and Nanosystems , 2003, A5.69
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Burdeaux, D.C., et al., J. Elec. Material, 19, 1357–1366, (1990).Google Scholar
2. Berry, M.J., et al., Proc. 40th Electronic Components and Technology Conf., 746–750, (1990).Google Scholar
3. Johnson, R.W., et al., IEEE Trans. CHMT, 13, 347–352, (1990).Google Scholar
4. Strandjord, A.J.G., et al., Proc. 44th Electronic Components and Technology Conf., 374–386, (1994).Google Scholar
5. Price, D.T., et al., Thin Solid Films, 308–309, 523–528, (1997).Google Scholar
6. Ida, Y., et al., Proc. 8th IEEE/CPMT Int. Electronic Manufacturing Technology Symp., 441 -444, (1995).Google Scholar
7. Keser, L.A., et al., IEEE Trans. Adv. Packaging, 23, 3–8, (2000).Google Scholar
8. Kane, C.F. and Krchnavek, R.R., IEEE Photon. Tech. Letters, 7, 535–537, (1995).Google Scholar
9. Wolff, S., et al., Appl. Phys. B, 73, 623–627, (2001).Google Scholar
10. Wolff, S., et al., J. Vac. Sci. Tech., 19, 87–89, (2001).Google Scholar
11. Okubora, A., et al., Proc. 52nd Electronic Components and Technology Conf., 672–675, (2002).Google Scholar
12. Huo, X., et al., IEEE Elec. Device Letters, 23, 520–522, (2002).Google Scholar
13. Strandjord, A.J.G., et al., Proc. 47th Electronic Components and Technology Conf., 1260–1268, (1997).Google Scholar
14. Laville, C., et al., Proc. 1st Ann. Int. IEEE-EMBS Special Topic Conf. Microtechnologies in Medicine and Biology, 572–577, (2000).Google Scholar
15. Niklaus, F., et al., Proc. IEEE 13th Int. Conf. Micro Electro Mechanical Systems, (2000).Google Scholar
16. Niklaus, F., et al., J. Micromech. Microeng., 11, 100–1–7, (2001).Google Scholar
17. Chou, T.-K.A. and Najafi, K., Proc. 11th Int. Conf. Solid-State Sensors and Actuators, (2001).Google Scholar
18. Chou, T.-K.A., et al., Proc. 11th International Conf. Solid-State Sensors and Actuators, (2001).Google Scholar
19. Ghalichechian, N., et al., Proc. AVS 50th Int. Symp., (2003).Google Scholar
20. Joshi, S.G. and White, R.M., J. Acoustical Soc. America, 46, 17–27, (1969).Google Scholar
21. Farnell, G.W., et al., IEEE Trans. Sonics and Ultrasonics, SU–17, 188–195, (1970).Google Scholar
22. Ponamgi, S.R. and Tuan, H.-S., IEEE Trans. Sonics and Ultrasonics, SU–21, 125–127, (1974).Google Scholar
23. Modafe, A., et al., Proc. AVS 49th Int. Symp., (2002).Google Scholar
24. Whitebead, S., Dielectric Phenomena, III.- Breakdown of Solid Dielectrics. 1932, New York.Google Scholar