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Electrical Characterization of Ultra-Shallow Junctions Formed by Diffusion From a CoSi2 Diffusion Source

Published online by Cambridge University Press:  15 February 2011

F. La Via and
E. Rimini
F. La Via
Affiliation:
CNR-IMETEM, Stradale Primosole 50, Catania, Italy.
E. Rimini
Affiliation:
Physics Department, Corso Italia 57, Catania, Italy.
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Abstract

Ultra-Shallow p+/n and n+/p junctions were fabricated using a Silicide-As-Diffusion-Source (SADS) process and a low thermal budget (800÷900 °C). A thin layer (50 nm) of CoSi2 was implanted with As and BF2 and subsequently diffused at different temperatures and times to form two Ultra-Shallow junctions with a junction depth of 14 and 20 nm. These diodes were extensively investigated by I-V and C-V measurements in the range of temperature between 80 and 500 K. TEM delineation was used to controll the junction uniformity.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996, 493
Copyright
Copyright © Materials Research Society 1996

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