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Electrical Conductivity Prediction in Langasite for Optimized Microbalance Performance at Elevated Temperatures

Published online by Cambridge University Press:  11 February 2011

Huankiat Seh,
Harry Tuller and
Holger Fritze
Huankiat Seh*
Affiliation:
Crystal Physics and Electroceramics Laboratory, Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge MA 02139, USA
Harry Tuller
Affiliation:
Crystal Physics and Electroceramics Laboratory, Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge MA 02139, USA
Holger Fritze
Affiliation:
Department of Physics, Metallurgy and Materials Science, Technische Universität Clausthal, D-38678 Clausthal-Zellerfeld, Germany
*
1 Fax: +1–617–258 5748, Phone:+1–617–253 2364, Email: huankiat@mit.edu Present address: Massachusetts Institute of Technology, Room 13–4010, 77 Massachusetts Ave, Cambridge MA 02139, USA.
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Abstract

The performance of the langasite-based crystal microbalance is limited due to reductions in its resistivity at high temperatures and reduced oxygen partial pressures. In this work, we utilize a recently developed defect model to predict the dependence of the ionic and electronic contributions to the total conductivity of langasite on temperature, oxygen partial pressure and acceptor and donor dopants. These results are used to select the type and concentrations of dopants expected to provide extended operating conditions for langasite-based gas sensors and crystal microbalances.

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References

REFERENCES

1. Tang, Z, Liu, S, Wang, E, Dong, S, Langmuir 16(11), 4946–4952 (2000).Google Scholar
2. Kunitake, M, Narikiyo, Y, Manabe, O, Nakashima, N, J. Mater. Sci. 30(9), 2338–2340 (1995).Google Scholar
3. Ohsawa, Y, Aoki, K, Sensors & Actuators B 14(1–3), 556–557 (1993).Google Scholar
4. Benes, E, Groschl, M, Burger, W, Schmid, M, Sensors and Actuators A 48, 1–21 (1995).Google Scholar
5. Schramm, U et al, Sensors and Actuators B 67, 219–226 (2000).Google Scholar
6. Fritze, H, Tuller, H L, Seh, H, Borchardt, G, Sensors and Actuators B 76, 103–107 (2001).Google Scholar
7. Hornsteiner, J, Born, E, Fischerauer, G, Riha, E, Proc. IEEE Int. Freq. Control, 615–620 (1998).Google Scholar
8. Fritze, H, Tuller, H L, Seh, H, Borchardt, G, Sensors and Actuators B 76, 103–107 (2001).Google Scholar
9. Fritze, H., Schneider, O., Borchardt, G., Conference paper submitted to “Sensors and Actuators B: International Meeting on Chemical Sensors”, Boston, July 8–10, 2002.Google Scholar
10. Seh, H., Tuller, H., Fritze, H., Conference paper submitted to “International Meeting on Chemical Sensors”, Boston, July 8–10, 2002.Google Scholar
11. Seh, H., Tuller, H., Fritze, H., Conference paper submitted to “Electroceramics VIII”, Rome, Aug 26–28, 2002.Google Scholar
12. Tuller, H L, Nowick, A S, J. of Electrochem. Soc. 126, 209–217 (1979).Google Scholar
13. Denk, I, Muench, W, Maier, J, J. Am. Ceram. Soc. 78, 3265–72 (1995).Google Scholar
14. Wang, S., Fundamentals of Semiconductor Theory and Device Physics, Prentice Hall, Englewood Cliffs, NJ, 1989, p. 207 Google Scholar
15. Seh, H. and Tuller, H.L., in preparation.Google Scholar