No CrossRef data available.
Article contents
Electrodeposited Cu-In-Ga-Se Thin Films for CIGS-based Solar Cells
Published online by Cambridge University Press: 31 January 2011
Abstract
Cyclic voltammogram studies were performed on H2SeO3, CuSO4, In2(SO4)3, GaCl3, H2SeO3 + CuSO4 + In2(SO4)3 and H2SeO3 + CuSO4 + In2(SO4)3 + GaCl3 to understand the electrodeposition mechanism. The reduction potential from the cyclic voltammogram studies indicates that the first deposited layer is Cu from the Cu-In-Se and Cu-In-Ga-Se solution mixture. The subsequent deposition of the In and Ga layer is more favorable on the first-deposited Cu layer.
Keywords
Information
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 2009
References
1.
Bhattacharya, R. N., Batchelor, W., Hiltner, J. F., Sites, J. R., “Thin-Film CuIn1-xGaxSe2 photovoltaic cells from solution-based precursor layers,” Appl. Phys. Lett., 75, 1431, 1999.Google Scholar
2.
Basol, B. M., “Low cost techniques for the preparation of Cu(In,Ga)(Se,S)2 absorber layers,” Thin Solid Films, 361-362, 514, 2000.Google Scholar
3.
Kapur, V. K., Bansal, A., Le, P., Asensio, O. I., “Non-vacuum processing of CuIn1-xGaxSe2 solar cells on rigid and flexible substrates using nanoparticle precursor inks,” Thin Solid Films, 431-432, 53, 2003.Google Scholar
4.
Lincot, D., “Electrodeposition of semiconductors,” Thin Solid Films, 487(1-2), 40, 2005.Google Scholar
5.
Mitzi, D. B., Yuan, M., Liu, W., Kellock, A., Chey, S. J., Deline, V., Schrott, A. G., “A highefficiency solution-deposited thin-film photovoltaic device,” Advanced Materials, 20, 3657, 2008.Google Scholar