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Electrodes and Barriers for Dram and Feram: Processing, Integration, and Fundamentals

Published online by Cambridge University Press:  21 March 2011

K.L. Saenger,
P.C. Andricacos,
S.D. Athavale,
J.D. Baniecki,
C. Cabral Jr,
G. Costrini,
K.T. Kwietniak,
R.B. Laibowitz,
J.J. Lian and
Y. Limb
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K.L. Saenger
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
P.C. Andricacos
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
S.D. Athavale
Affiliation:
IBM Microelectronics, Hopewell Junction, NY 12533
J.D. Baniecki
Affiliation:
IBM Microelectronics, Hopewell Junction, NY 12533
C. Cabral Jr
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
G. Costrini
Affiliation:
IBM Microelectronics, Hopewell Junction, NY 12533
K.T. Kwietniak
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
R.B. Laibowitz
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
J.J. Lian
Affiliation:
Infineon, Hopewell Junction, NY 12533
Y. Limb
Affiliation:
Infineon, Hopewell Junction, NY 12533
D.A. Neumayer
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
M.L. Wise
Affiliation:
Infineon, Hopewell Junction, NY 12533
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Abstract

Materials requirements for electrodes and barriers in high density dynamic random access memory (DRAM) and ferroelectric random access memory (FERAM) are reviewed, and some approaches to barrier materials and device geometries are described. Electrode/barrier topics covered in more detail include Pt reactivity with Si-containing barriers and dielectric overlayers, the application of a Bragg-Brentano x-ray diffraction technique to quantitatively probe Pt and Ir electrode morphology and thickness changes during ferroelectric processing, the stability of metal oxide electrode materials in reducing ambients, electrode patterning techniques (including Pt electroplating), and electrical properties of 3-D capacitors in 256k arrays as a function of top electrode annealing treatments.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000, CC2.1.1
Copyright
Copyright © Materials Research Society 2001

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References

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