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Electromigration of Cu Interconnect Lines Prepared by a Plasma-based Etch Process

Published online by Cambridge University Press:  01 February 2011

Guojun Liu and
Yue Kuo
Guojun Liu
Affiliation:
guojun@tamu.edu, Texas A&M University, Thin Film Nano & Microelectronics Research Laboratory, 235 J. E. Brown Engineering Bldg., MS 3122, College Station, TX, 77843-3122, United States
Yue Kuo
Affiliation:
yuekuo@tamu.edu, Texas A&M University, Thin Film Nano & Microelectronics Research Laboratory, 235 J. E. Brown Eng. Bldg., MS 3122, TAMU, College Station, TX, 77843-3122, United States, 979-845-9807, 979-458-8836
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Abstract

The electromigration performance of Cu lines patterned by a Cl2 plasma-based etch process has been studied with the accelerated isothermal lifetime test. An electromigration activation energy of 0.6 eV and a current density acceleration exponent of 2.7 were obtained. Both the copper-silicon nitride cap layer interface and the copper grain boundary were active diffusion paths. The applied mechanical bending stress changed the electromigration void distribution in the film, which leaded to the shorter lifetime and lower activation energy.

Keywords

Cuthin filmelectromigration

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