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Electron Irradiation of Graphene Field Effect Transistor Devices

Published online by Cambridge University Press:  02 August 2013

Sung Oh Woo and
Winfried Teizer
Sung Oh Woo
Affiliation:
Department of Physics and Astronomy, Texas A&M University, College Station, TX 77843-4242, U.S.A.
Winfried Teizer
Affiliation:
Department of Physics and Astronomy, Texas A&M University, College Station, TX 77843-4242, U.S.A.WPI-Advanced Institute for Materials Research, Tohoku University, Sendai, Japan.
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Abstract

We report the effects of electron irradiation on graphene Field Effect Transistor (FET) devices. We irradiated the graphene devices with 30keV electrons and measured the electrical transport properties in high vacuum in-situ. Upon electron irradiation, a Raman ‘D’ band appears. In addition, we observed that the doping behavior of the graphene devices changed from P to N type as a result of the irradiation. We also observed a shift of the Dirac point while the graphene FET device stays in vacuum and after it interacted with environmental molecules under ambient conditions.

Keywords

electron irradiationadsorptionC

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References

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