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Electron-Beam-Induced-Current (EBIC) Imaging of Defects in Si1−xGeX Multilayer Structures

Published online by Cambridge University Press:  25 February 2011

J.C. Sturm,
X. Xiao,
P.M. Garone and
P.V. Schwartz
J.C. Sturm
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, N.J. 08544
X. Xiao
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, N.J. 08544
P.M. Garone
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, N.J. 08544
P.V. Schwartz
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, N.J. 08544
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Abstract

The electron-beam-induced-current (EBIC) technique has been used to image dislocations and other defects at strained Si: Sil−xGex epitaxial interfaces and in overlying epitaxial layers grown by Limited Reaction Processing. Depending upon the bias conditions and test structure, one can distinguish between interface defects and those in overlying films. We have found that for a low density of misfit dislocations, a high quality (defect-free) overlying epitaxial layer can be grown, but for a high density of dislocations certain line defects propagate upwards in the overlying layers.

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