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Electronic and Atomic Properties of a-C:H/Semiconductor Interfaces

Published online by Cambridge University Press:  25 February 2011

M. Wittmer,
D. Ugolini and
P. Oelhafen
M. Wittmer
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, N.Y. 10598
D. Ugolini
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, N.Y. 10598
P. Oelhafen
Affiliation:
Institute of Physics, University of Basel, CH-4056 Basel, Switzerland
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Abstract

We have investigated the electronic and atomic properties of the interface between amorphous hydrogenated carbon (a-C:H) films and the semiconductor materials Si, Ge and GaAs with photoelectron spectroscopy, high resolution transmission electron microscopy and ion channeling technique. The different properties of the interfacial layers are summarized and compared to the adhesion quality of a-C:H films on these semiconductor materials.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989, 327
Copyright
Copyright © Materials Research Society 1990

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References

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