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Electronic and Atomic Structure of Ge2Sb2Te5 phase change memory material

Published online by Cambridge University Press:  01 February 2011

John Robertson,
Ka Xiong and
Paul Peacock
John Robertson
Affiliation:
jr@eng.cam.ac.uk, Cambridge University, Engineering, Trumpington St, Cambridge, N/A, CB2 1PZ, United Kingdom, 44 1223 748331, 44 1223 332662
Ka Xiong
Affiliation:
kx200@eng.cam.ac.uk, Cambridge University, Engineering, Cambridge, N/A, CB2 1PZ, United Kingdom
Paul Peacock
Affiliation:
pwp10@eng.cam.ac.uk, Cambridge University, Engineering, Cambridge, N/A, CB2 1PZ, United Kingdom
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Abstract

Electronic structure calculations are presented for various model structures of the crystalline and amorphous phases of Ge2Sb2Te5 (GST). The structures are all found to possess a band gap of order 0.5 eV, indicating closed shell behaviour. It is pointed out that structural vacancies in A7-like GST are not electronically active. In addition, A7-like structures do not support valence alternation pair (VAP) defects, which are one model of the conduction processes in the glassy phase in non-volatile memories.

Keywords

electrical propertiesphase transformationstructural

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 918: Symposium H – Chalcogenide Alloys for Reconfigurable Electronics , 2006, 0918-H01-02
Copyright
Copyright © Materials Research Society 2006

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