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Electronic Characterization of Compound Semiconductor Surfaces And Interfaces

Published online by Cambridge University Press:  15 February 2011

Winfred MÖnch
Winfred MÖnch*
Affiliation:
Laboraborium für Festkörperphysik, Universitait Duisburg, Bismarckstrasse 81, D-4100 Duisburg, (F.R.G.)
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Abstract

Metal-semiconductor contacts and semiconductor heterojunctions are wellestablished concepts in semiconductor device technology. The key parameters characterizing such junctions are the barrier height and valence band discontinuity at the interface and the electronic interface states. Clean cleaved GaAs(110) surfaces exhibit no intrinsic surface states in the bulk band gap but do exhibit extrinsic cleavage-induced states. Furthermore, local segregates of arsenic were detected. The chemisorption of metals, semiconductors, hydrogen and oxygen causes depletion layers to form on both n-and p-type crystals. The surface states responsible for these band bendings, which persist even under thick layers of metals and semiconductors, are thought to be related to chemisorption-induced defects. Possible candidates are discussed. Chemical trends are also considered.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982, 285
Copyright
Copyright © Materials Research Society 1982

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References

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