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The Electronic Structure of Doped Arsenic Triselenide

Published online by Cambridge University Press:  25 February 2011

R. P. Barclay,
J. M. Marshall and
C. Main
R. P. Barclay
Affiliation:
Departement de physique, Université de Montréal, case postale 6128, Montréal, P.Q., H3C 3J7
J. M. Marshall
Affiliation:
Department of Physics, Dundee College of Technology, Bell Street, Dundee DD1 1HG, Scotland
C. Main
Affiliation:
Department of Physics, Dundee College of Technology, Bell Street, Dundee DD1 1HG, Scotland
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Abstract

We have investigated the electronic properties of films of arsenic triselenide into which the transition metal nickel has been introduced by a co-sputtering technique. Measurement of d.c. conductivity, thermopower, optical absorption and photomobility have been performed to characterise the material. These measurements give new information concerning the influence of nickel on the optical gap, the position of the Fermi-level, and other aspects of transport in As2 Se3. In the most heavily doped sample the d.c. conductivity is increased by 11 orders of magnitude and the position of the Fermi-level is shifted by ΔEF∼0.6 eV. The results are explained in terms of a model in which an acceptor level is introduced into the valence band tail of a background density of states (DOS) obtained earlier for the undoped material. In contrast to the suggestion by previous workers that the incorporation of high concentrations of nickel can produce a transition to n-type conduction, we argue that the Fermi-level remains in the valence band tail and that hopping conduction of carriers close the Fermi-level yields a negative sign in thermopower.

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Articles
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MRS Online Proceedings Library (OPL) , Volume 61: Symposium P – Defects in Glasses , 1985, 307
Copyright
Copyright © Materials Research Society 1986

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