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Energetic Ion Beams in Semiconductor Processing: Summary of a Doe Panel Study

Published online by Cambridge University Press:  21 February 2011

S. T. Picraux,
E. Chason,
J. M. Poate,
J. O. Borland,
M. I. Current,
T. Diaz De La Rubia,
D. J. Eaglesham,
O. W. Holland,
M. E. Law and
C. W. Magee
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S. T. Picraux
Affiliation:
Sandia National Laboratories, Albuquerque, NM;
E. Chason
Affiliation:
Sandia National Laboratories, Albuquerque, NM;
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ;
J. O. Borland
Affiliation:
Genus Corporation, Newburyport, MA;
M. I. Current
Affiliation:
Applied Materials, Austin, TX;
T. Diaz De La Rubia
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA;
D. J. Eaglesham
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ;
O. W. Holland
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN;
M. E. Law
Affiliation:
University of Florida, Gainesville, FL;
C. W. Magee
Affiliation:
Evans East, Plainsboro, NJ;
J. W. Mayer
Affiliation:
Arizona State University, Tempe, AZ;
J. Melngailis
Affiliation:
University of Maryland, College Park, MD;
A. F. Tasch
Affiliation:
University of Texas, Austin, TX.
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Abstract

The trend toward smaller dimensions in integrated circuit technology presents severe physical and engineering challenges for ion implantation. These challenges, together with the need for physically-based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in silicon. Recently the DOE Council on Materials requested that our panel examine the current status and future research opportunities in the area of ion beams in semiconductor processing. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. These topics were explored both from the perspective of the emerging science issues and the technology challenges.

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References

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