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Enhanced Diffusion and Formation of Defects During Thermal Oxidation*

Published online by Cambridge University Press:  15 February 2011

J. Narayan,
J. Fletcher,
B. R. Appleton and
W. H. Christie
J. Narayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
J. Fletcher
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
B. R. Appleton
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
W. H. Christie
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830Analytical Chemistry Division.
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Abstract

Enhanced diffusion of dopants and the formation of defects during thermal oxidation of silicon has been investigated using electron microscopy, Rutherford backscattering, and secondary ion mass spectrometry techniques. Enhanced diffusion of boron was clearly demonstrated in laser annealed specimens in which secondary defects were not present. In the presence of secondary defects, such as precipitates, enhanced diffusion of boron was not observed. The absence of enhanced diffusion during thermal oxidation was also observed for arsenic in silicon. The mechanisms associated with thermal–oxidation enhanced diffusion are discussed briefly.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980, 355
Copyright
Copyright © Materials Research Society 1981

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.

References

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