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Enhanced Efficiency and Stability in P3HT:PCBM Bulk Heterojunction Solar Cell by using TiO2 Hole Blocking Layer

Published online by Cambridge University Press:  26 February 2011

Osamu Yoshikawa,
Akinobu Hayakawa,
Takuya Fujieda,
Kaku Uehara and
Susumu Yoshikawa
Osamu Yoshikawa
Affiliation:
o-yoshi@iae.kyoto-u.ac.jp, Institute of Advanced Energy, Kyoto University, Uji, Kyoto, N/A, Japan
Akinobu Hayakawa
Affiliation:
hayakawa@iae.kyoto-u.ac.jp, Institute of Advanced Energy, Kyoto University, Uji, Kyoto, 611-0011, Japan
Takuya Fujieda
Affiliation:
fujieda@iae.kyoto-u.ac.jp, Institute of Advanced Energy, Kyoto University, Uji, Kyoto, 611-0011, Japan
Kaku Uehara
Affiliation:
uehara@iae.kyoto-u.ac.jp, Institute of Advanced Energy, Kyoto University, Uji, Kyoto, 611-0011, Japan
Susumu Yoshikawa
Affiliation:
s-yoshi@iae.kyoto-u.ac.jp, Institute of Advanced Energy, Kyoto University, Uji, Kyoto, 611-0011, Japan
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Abstract

Insertion of TiO2 layer between Al negative electrode and active layer of bulk-heterojunction gave a high solar conversion efficiency and high stability. The TiO2 layer was prepared by spin-coating titanium(IV)isopropoxide (Ti(OC3H7)4) on active layer of blended P3HT:PCBM. The parallel resistance (Rp) is increased by inserting TiO2 layer leading to an increase in Voc. The TiO2 layer works as a hole blocking layer and prevents the physical and chemical damages by the direct contact between P3HT:PCBM active layer and Al electrode resulting in improvement of the parallel resistance and rectification. The efficiency of P3HT:PCBM bulk heterojunction cell with TiO2 hole blocking layer attained 4.05% with a Isc 9.72 mA/cm2, Voc 0.60 V, and FF 0.70 by using optimized TiO2 film thickness and ratio of P3HT:PCBM condition.

Keywords

thin filmceramicTi

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References

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