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Epitaxy and Defects in Laser-Irradiated, Single-CrystalBismuth

Published online by Cambridge University Press:  25 February 2011

Aubrey L. Helms Jr.,
Clifton W. Draper,
Dale C. Jacobson,
John M. Poate and
Steven L. Bernasek
Aubrey L. Helms Jr.
Affiliation:
Department of Chemistry, Frick Chemistry Laboratory, Princeton University, Princeton, NJ 08554;
Clifton W. Draper
Affiliation:
AT&T Technologies Engineering Research Center, P.O. Box 900, Princeton, NJ 08540;
Dale C. Jacobson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974.
John M. Poate
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974.
Steven L. Bernasek
Affiliation:
Department of Chemistry, Frick Chemistry Laboratory, Princeton University, Princeton, NJ 08554;
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Abstract

The (0001), (1010), and (2110) faces of Bi have been pulse laser melted at0.5 J/cm2 with a Q-switched Ruby laser. Nomarski InterferenceContrast Microscopy, Channeling, and selective chemical etching have beenused to investigate the response to the laser irradiation. The response ofthe material and the level of damage is shown to be strongly correlated tothe critical resolved shear stress characteristics in the particularcrystallographic direction studied.

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References

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