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Evaluation of the Dice Method as A Tool For Amorphous Silicon Solar Cell Optimization

Published online by Cambridge University Press:  21 February 2011

M. B. Von Der Linden,
R. E. I. Schropp,
J. G. F. Stammeijer and
W. F. Van Der Weg
M. B. Von Der Linden
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80.000, NL - 3508 TA Utrecht, The Netherlands.
R. E. I. Schropp
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80.000, NL - 3508 TA Utrecht, The Netherlands.
J. G. F. Stammeijer*
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80.000, NL - 3508 TA Utrecht, The Netherlands.
W. F. Van Der Weg
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80.000, NL - 3508 TA Utrecht, The Netherlands.
*
* Current Address: K/SEPL, Rijswijk, The Netherlands.
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Abstract

Information about the spatial collection efficiency in a-Si:H solar cells is obtained from the Dynamic Inner Collection Efficiency (DICE) technique. With this non-destructive method single junction solar cells with efficiencies up to 10 % have been analysed under operating conditions. The influence of i-layer deposition parameters, such as the temperature and deposition time, on the spatial collection efficiency have been investigated. Deposition parameters for the i-layer have a large influence on the collection from the first 100 nm from the p+/i-interface. A higher i-layer deposition temperature or a longer deposition time results in a higher internal collection efficiency at a depth of 70 nm into the i-layer. Also results of DICE experiments on various textured TCO substrates are presented.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992, 935
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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