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Evidence for Hydrogen-Hydrogen Interactions During Diffusion in a-Si:H

Published online by Cambridge University Press:  21 February 2011

W. B. Jackson,
C.C. Tsai and
P. V. Santos
W. B. Jackson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
C.C. Tsai
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
P. V. Santos
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

The effects of H concentration on H transport has been measured by deuteration of H depleted samples which were re-hydrogenated at various concentrations and on samples subjected to various annealing protocols. A remarkable observation is that the trap density appears to increase with H concentration. Extended thermal annealing appears to increase the trap depth but does not markedly alter the number of traps. The results suggest that H introduced from the plasma is less strongly bound than H residing in the film during annealing. Nucleation and growth of H clusters is introduced as a possible model accounting for these transport results.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992, 319
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Zellama, K., Germain, P., Squelard, S., Bourdon, B., Fontenille, J., and Danielou, R., Phys. Rev. B, 23, 6648 (1981).Google Scholar
2. Santos, P. V., Johnson, N. M., and Street, R. A., Phys. Rev. Lett. 67, 2686 (1991).Google Scholar
3. Kondo, M. and Morigaki, K., Jour, of Non-Crystalline Solids 137&138, 247 (1991).Google Scholar
4. Zafar, S. and Schiff, E. A., Phys. Rev. B. 40, 5235 (1990).CrossRefGoogle Scholar
5. Jackson, W. B. and Tsai, C. C., Phys. Rev. B 6545Google Scholar
6. Carlson, D. E., Appl. Phys. A 41, 305 (1986).Google Scholar
7. Jackson, W. B., Tsai, C. C., and Santos, P. V., Jour, of Non-Crystalline Solids 137&138, 21 (1991).Google Scholar
8. Herring, C. and Johnson, N. M. in Semiconductors and Semimetals, edited by Pankove, J. I. and Johnson, N. M. (Academic, San Diego, 1991), Vol. 34, Chap. 10.Google Scholar
9. Santos, P. V. and Jackson, W. B. (these proceedings).Google Scholar
10. Tsai, C.C., Anderson, G. B. and Thompson, R., Jour, of Non-Crystalline Solids 137&138 673 (1991) andGoogle Scholar
Tsai, C. C., Anderson, G., and Jackson, W. B. these proceedings).Google Scholar
11. Street, R. A., Phys. Rev. B 43, 2454 (1991).CrossRefGoogle Scholar