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Excimer Laser Induced Micron-Size Pattern Etching By Image Projection

Published online by Cambridge University Press:  26 February 2011

James H. Brannon
James H. Brannon*
Affiliation:
IBM East Fishkill Development Laboratory, Route 52, Z-340, Hopewell Jet., NY 12533
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Abstract

Patterned fine-line features as small as 0.8 microns have been etched in polyimide, silicon, and copper by use of ablative and chemical techniques. KrF excimer laser pattern etching was accomplished by use of a Kohler-type projection system employing a Uv refracting microscope objective. Ablative etching of polyimide was accomplished in air, while silicon and copper were chemically etched using the vapor of chlorine or carbon tetrachloride.

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