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Extremely Low Temperature Silicon Liquid Phase Epitaxy

Published online by Cambridge University Press:  15 February 2011

M. Konuma,
I. Silier,
A. Gutjahr,
E. Bauser,
F. Banhart,
H. Frey and
N. Nagel
M. Konuma
Affiliation:
Max-Planck-Institut fur Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany
I. Silier
Affiliation:
Max-Planck-Institut fur Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany
A. Gutjahr
Affiliation:
Max-Planck-Institut fur Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany
E. Bauser
Affiliation:
Max-Planck-Institut fur Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany
F. Banhart
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany
H. Frey
Affiliation:
LSG GmbH, Mörikestrasse 2, 73773 Aichwald, Germany
N. Nagel
Affiliation:
Max-Planck-Institut fur Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany
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Abstract

By liquid phase epitaxy (LPE) we have grown silicon layers on silicon and partially masked silicon at temperatures below 450 °C from Ga and Ga-In solutions. Oxidation of the cleaned silicon substrate surfaces before epitaxial growth has been prevented by a buffered hydrofluoric acid treatment. The epitaxial layers reached a thickness of 7 jim and were free of extended defects.

Low growth temperatures make it possible to grow silicon layers also on pre-treated glass substrates. The amorphous glass is first coated with a thin nano-crystalline silicon layer which is deposited by plasma processes from a mixture of SiH4/H2 gas. The grains in the silicon layers grown from Ga solution on glass have reached sizes up to 100 μm.

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References

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