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Ferroelectric Thin Films for Microelectromechanical Device Applications

Published online by Cambridge University Press:  15 February 2011

D. L. Polla,
W. P. Robbins,
T. Tamagawa and
C. Ye
D. L. Polla
Affiliation:
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota USA 55455
W. P. Robbins
Affiliation:
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota USA 55455
T. Tamagawa
Affiliation:
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota USA 55455
C. Ye
Affiliation:
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota USA 55455
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Abstract

Ferroelectric thin films of the lead zirconate titanate family have been integrated with silicon-based micromachined structures in the fabrication of microelectromechanical devices. Sol-gel deposition techniques have been applied in the formation of ferroelectric thin films with high piezoelectric and pyroelectric coefficients for physical forces sensors and infrared detectors, respectively. Knowledge of both electrical and mechanical properties is important in realizing microelectromechanical devices with predictable performance. This pape reports piezoelectric coefficient, pyroelectric coefficient, dielectric constant, and Young's modulus for lead zirconate titanate and lead titanate thin films.

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References

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