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First Principles Molecular Dynamics Studies of a-Si and a-Si:H

Published online by Cambridge University Press:  01 January 1993

P.A. Fedders
P.A. Fedders*
Affiliation:
Department of Physics, Washington University,, St. Louis,, MO 63130
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Abstract

We give a brief description of the various classes of molecular dynamics simulations and then describe what we have learned from our simulations recently. This includes information on the nature of defects in a-Si:H including positions in the energy gap and localization, relaxation and rearrangement effects, light induced defects, and the motion of H atoms and Si dangling bonds.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993, 159
Copyright
Copyright © Materials Research Society 1993

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References

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