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Formation and Evolution of Three Dimensional Structures in the Cu/Sn/Si(111) System

Published online by Cambridge University Press:  15 February 2011

Qin Hu,
I. V. Mitchell and
M. Zinke-Allmang
Qin Hu
Affiliation:
Department of Physics and Astronomy, The University of Western Ontario, London, Ontario, Canada, N6A 3K7
I. V. Mitchell
Affiliation:
Department of Physics and Astronomy, The University of Western Ontario, London, Ontario, Canada, N6A 3K7
M. Zinke-Allmang
Affiliation:
Department of Physics and Astronomy, The University of Western Ontario, London, Ontario, Canada, N6A 3K7
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Abstract

Copper is a prevalent contaminant in silicon device fabrication. Since Cu has high solubility in Sn, we are exploring the use of Sn to form Cu-Sn surface alloys as a means to inhibit Cu diffusion into Si substrates. Cu/Sn/Si (111) samples were prepared by MBE at 100°C, then annealed at temperatures between 300°C and 600°C. Resultant surface structures were imaged by AFM and SEM. AES and EDX were used to investigate the composition of two differently shaped clusters that formed after annealing. Etching with dilute HCI solutions was used to seek the chemical origin of various surface morphologies. The results are compared with those from Sn/Si and Cu/Si samples. A possible model for the evolution of 3-D structures in the Cu/Sn/Si(111) system will be presented.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 580: Symposium E – Nucleation & Growth Processes in Materials , 1999, 57
Copyright
Copyright © Materials Research Society 2000

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