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Formation of High Quality GaAs/Si Hetero-Structure by Solid Phase Epitaxy

Published online by Cambridge University Press:  26 February 2011

M. Miyao,
T. Shimada,
A. Nishid,
T. Inada,
M. Tamura,
M. Ishino and
I. ohbu
M. Miyao
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, JAPAN
T. Shimada
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, JAPAN
A. Nishid
Affiliation:
College of Engineering, Hosei University, Koganei, Tokyo, JAPAN
T. Inada
Affiliation:
College of Engineering, Hosei University, Koganei, Tokyo, JAPAN
M. Tamura
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, JAPAN
M. Ishino
Affiliation:
Production Engineering Research Laboratory, Hitachi Ltd., Yoshida-machi, Totsuka-ku, Yokohama, JAPAN
I. ohbu
Affiliation:
Production Engineering Research Laboratory, Hitachi Ltd., Yoshida-machi, Totsuka-ku, Yokohama, JAPAN
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Abstract

Improvements of crystal quality in GaAs/Si heterostructure by solid phase epitaxy (SPE) are described. RBS and TEM measurements indicate that high density defects are located near the GaAs/Si interface after “2-step MBE”. Utilization of post SPE process (amorphization plus regrowth) significantly improve crystal qujali ty at the GaAs/Si interface, although a small stress field is introduced. In addition a new relation between photoluminecence intensity ratio and stress field is established. This provides a useful too] for measuring small stresses remaining in the GaAs/Si hetero-structure.

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References

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