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Formation of Si-On-Insulator Structure By Lateral Solid Phase Epitaxy

Published online by Cambridge University Press:  28 February 2011

M. Miyao.,
K Moniwa,
K Kusukawa,
T. Warabisako,
E. Murakami and
W. Sinke
M. Miyao.
Affiliation:
Central Research Laboratory. Hitachi Ltd., Kokubunji Tokyo 185, Japan
K Moniwa
Affiliation:
Central Research Laboratory. Hitachi Ltd., Kokubunji Tokyo 185, Japan
K Kusukawa
Affiliation:
Central Research Laboratory. Hitachi Ltd., Kokubunji Tokyo 185, Japan
T. Warabisako
Affiliation:
Central Research Laboratory. Hitachi Ltd., Kokubunji Tokyo 185, Japan
E. Murakami
Affiliation:
Central Research Laboratory. Hitachi Ltd., Kokubunji Tokyo 185, Japan
W. Sinke
Affiliation:
Central Research Laboratory. Hitachi Ltd., Kokubunji Tokyo 185, Japan
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Abstract

Formation of a Si-on-insulator structure by a solid phase process was investigated. Examination by µ-RHEED method revealed that oriented crystal growth propagated from the seeding area by a solid phase epitaxy (SPE) in the low temperature range around 550 °C. In addition . a new local doping method was developed. This realized a relatively large lateral-SPE area on insulating regions (14 µm from the seeding area). Crystal quality and electrical properties of SPE layers were precisely examined utilizing µ-Raman spectroscopy and MOSFET fabrication. A small stress field and high electron mobility comparable to that of bulk Si were obtained.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987, 387
Copyright
Copyright © Materials Research Society 1987

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References

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