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Gallium Arsenide Surface Inversion using a Novel Silicon–Silicon Dioxide Insulator Structure

Published online by Cambridge University Press:  26 February 2011

G.G. Fountain,
R.A. Rudder,
S.V. Hattangady,
R.J. Markunas and
D.J. Vitkavage
G.G. Fountain
Affiliation:
Research Triangle Institute, Research Triangle Park, NC, 27709
R.A. Rudder
Affiliation:
Research Triangle Institute, Research Triangle Park, NC, 27709
S.V. Hattangady
Affiliation:
Research Triangle Institute, Research Triangle Park, NC, 27709
R.J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, NC, 27709
D.J. Vitkavage
Affiliation:
now at AT&T Laboratories Allentown, PA 18103
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Abstract

A novel GaAs metal insulator semiconductor (MIS) structure in which the surface of the GaAs is unpinned and inverted is reported. The structure utilizes a thinsingle crystalline Si interlayer between the GaAs surface and a SiO2 insulator. The Si and SiO2 are deposited using low temperature remote plasma chemical vapor deposition techniques. Characteristics of the Si layer have been examined using reflecting high energy electron diffraction, Xray photoelectron spectroscopy, and He ion scattering spectroscopy. The complete MIS structure has been characterized using capacitance-voltage data taken at frequencies ranging from near D.C. (quasistatic) to 100 MHz. The structure exhibits deep depletion and inversion behavior. Calculation of the surface potential variation using quasistatic data indicates that the surface potential is varied by 0.83 V with an applied electric field from −1.6 to 3.2 MV- cm−1.

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References

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