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GaN Decomposition in Ammonia

Published online by Cambridge University Press:  03 September 2012

D.D. Koleske,
A.E. Wickenden and
R.L. Henry
D.D. Koleske
Affiliation:
Code 6861, Electronic Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375
A.E. Wickenden
Affiliation:
Code 6861, Electronic Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375
R.L. Henry
Affiliation:
Code 6861, Electronic Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375
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Abstract

GaN decomposition is studied as a function of pressure and temperature in mixed NH3 and H2 flows more characteristic of the MOVPE growth environment. As NH3 is substituted for the 6 SLM H2 flow, the GaN decomposition rate at 1000 °C is reduced from 1x1016 cm-2s-1 (i.e. 9 monolayers/s) in pure H2 to a minimum of 1x1014 cm-2s-1 at an NH3 density of 1x1019 cm-3. Further increases of the NH3 density above 1x1019 cm-3 result in an increase in the GaN decomposition rate. The measured activation energy, EA, for GaN decomposition in mixed H2 and NH3 flows is less than the EA measured in vacuum and in N2 environments. As the growth pressure is increased under the same H2 and NH3 flow conditions, the decomposition rate increases and the growth rate decreases with the addition of trimethylgallium to the flow. The decomposition in mixed NH3 and H2 and in pure H2 flows behave similarly, suggesting that surface H plays a similar role in the decomposition and growth of GaN in NH3.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999, F99W3.64
Copyright
Copyright © Materials Research Society 1999

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