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GaN Growth on Si Using ZnO Buffer Layer

Published online by Cambridge University Press:  01 February 2011

K.C. Kim,
S.W. Kang,
O. Kryliouk,
T.J. Anderson,
D. Craciun,
V. Craciun and
R.K. Singh
K.C. Kim
Affiliation:
Department of Chemical Engineering, P.O. Box 116005, Gainesville, FL 32611-6005 D. Craciun National Institute for Laser, Plasma and Radiation, Romania
S.W. Kang
Affiliation:
Department of Chemical Engineering, P.O. Box 116005, Gainesville, FL 32611-6005 D. Craciun National Institute for Laser, Plasma and Radiation, Romania
O. Kryliouk
Affiliation:
Department of Chemical Engineering, P.O. Box 116005, Gainesville, FL 32611-6005 D. Craciun National Institute for Laser, Plasma and Radiation, Romania
T.J. Anderson
Affiliation:
Department of Chemical Engineering, P.O. Box 116005, Gainesville, FL 32611-6005 D. Craciun National Institute for Laser, Plasma and Radiation, Romania
D. Craciun
Affiliation:
National Institute for Laser, Plasma and Radiation, Romania
V. Craciun
Affiliation:
Materials Sciences and Engineering, P.O. Box 116400, Gainesville, FL 32611-6400
R.K. Singh
Affiliation:
Materials Sciences and Engineering, P.O. Box 116400, Gainesville, FL 32611-6400
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Abstract

ZnO films were deposited by Pulsed Laser Deposition (PLD) onto silicon substrates to serve as a buffer layer for GaN films grown by MOCVD. A ZnO buffer layer was found to improve the quality of GaN grown on Si. The thermal stability of ZnO as a buffer layer was also examined. It was determined that exposure of ZnO/Si to NH3 at high temperature (> 600°C) results in the decomposition of ZnO and subsequent poor nucleation of GaN. The ZnO layer thickness on GaN quality was found to be important.

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