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GaN-Based MSM uv Photodetectors

Published online by Cambridge University Press:  10 February 2011

S. Liang,
W. Cai,
Y. Li,
Y. Liu,
Y. Lu,
C.A. Tran,
R.F. Karlicek and
I. Ferguson
S. Liang
Affiliation:
Department of ECE, Rutgers University, Piscataway, NJ 08855-0909
W. Cai
Affiliation:
Department of ECE, Rutgers University, Piscataway, NJ 08855-0909
Y. Li
Affiliation:
Department of ECE, Rutgers University, Piscataway, NJ 08855-0909
Y. Liu
Affiliation:
Department of ECE, Rutgers University, Piscataway, NJ 08855-0909
Y. Lu
Affiliation:
Department of ECE, Rutgers University, Piscataway, NJ 08855-0909
C.A. Tran
Affiliation:
EMCORE Corporation, Somerset, NJ 08873
R.F. Karlicek
Affiliation:
EMCORE Corporation, Somerset, NJ 08873
I. Ferguson
Affiliation:
EMCORE Corporation, Somerset, NJ 08873
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Abstract

Results obtained from interdigital metal-semiconductor-metal (MSM) type of GaN based UV photodetectors are presented. MSM devices were fabricated using two types of GaN; high-resistive GaN and Mg doped GaN. For the high-resistive GaN detector, the lowest dark current is ∼0.1 nA and the UV responsivity of the device was about 460 AAV at a DC bias of 30 V. The Mg doped GaN exhibited large gains, 1150 A/W at 2.0 V, but at much higher dark currents, 400 nA. The high gain in this device is not well understood but was attributed to an ‘avalanche’ effect and is under investigation. It was found that the surface plasma treatment plays an important role in the device performance. After an appropriate plasma treatment the detectors showed higher responsivity with lower dark current.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996, 1221
Copyright
Copyright © Materials Research Society 1997

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References

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