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Ge Diffusion in SnTe Crystal

Published online by Cambridge University Press:  10 February 2011

O.E. Kaportseva,
L.V. Yashina,
V.B. Bobruiko,
D.V. Safonov,
V.F. Kozlovsky,
V.I. Shtanov and
T.B. Shatalova
O.E. Kaportseva
Affiliation:
Chemistry Department, Moscow State University, Leninskie Gory, Moscow, 119899, Russia, e-mail: lada@hfpm.chem.msu.su
L.V. Yashina
Affiliation:
Chemistry Department, Moscow State University, Leninskie Gory, Moscow, 119899, Russia, e-mail: lada@hfpm.chem.msu.su
V.B. Bobruiko
Affiliation:
Chemistry Department, Moscow State University, Leninskie Gory, Moscow, 119899, Russia, e-mail: lada@hfpm.chem.msu.su
D.V. Safonov
Affiliation:
Chemistry Department, Moscow State University, Leninskie Gory, Moscow, 119899, Russia, e-mail: lada@hfpm.chem.msu.su
V.F. Kozlovsky
Affiliation:
Chemistry Department, Moscow State University, Leninskie Gory, Moscow, 119899, Russia, e-mail: lada@hfpm.chem.msu.su
V.I. Shtanov
Affiliation:
Chemistry Department, Moscow State University, Leninskie Gory, Moscow, 119899, Russia, e-mail: lada@hfpm.chem.msu.su
T.B. Shatalova
Affiliation:
Chemistry Department, Moscow State University, Leninskie Gory, Moscow, 119899, Russia, e-mail: lada@hfpm.chem.msu.su
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Abstract

This work is devoted to the study of Ge diffusion in crystalline Sn1-δTe1+8 with δ=0.0065±0.0008 in temperature range T=878-973 K by electron probe microanalysis and layer by layer X-ray analysis. For the latter lattice constant dependence on composition was determined: a(Å)=a(SnTe)-(0.368±0.008)× where 0<×<0. 1. Activation energy was found to be about 1.3 eV, much less than in the case of Ge diffusion in PbTe.

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References

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