Hostname: page-component-74656f9884-8r8nv Total loading time: 0 Render date: 2026-11-10T09:22:08.871Z Has data issue: false hasContentIssue false
  • English
  • Français

Gettering In Silicon

Published online by Cambridge University Press:  28 February 2011

T. F. Seidel
T. F. Seidel*
Affiliation:
Diamond Cubic Corporation 4039 Avenida de la Plata Oceanside, CA 92054
Get access

Abstract

This paper reviews the basis for phenomenological path for gettering: release, diffusionand capture in the context of old and new developments. More recent precipitation studies in silicon are now recognized to involve complex interactive effects. Controlled precipitation requires knowledge of and control of not only oxygen but carbon, native defects(related to crystal thermal history and/or process history), high doping, microfluctuations and interactions between “extrinsic” and “intrinsic” gettering.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Goetzberger, A. and Shockley, W., J. Appl. Phys., 31, 1821 (1960)CrossRefGoogle Scholar
2. Buck, T. M., Pickar, K. A., Poate, J. M. and Hsieh, C. M., Appl. Phys. Lett, 21, 485 (1972)Google Scholar
3. Hsieh, C. M., Mathews, J., Seidel, H. D., Pickar, K. M. and Drum, C. M., Appl. Phys. Lett, 22, 238 (1973)CrossRefGoogle Scholar
4. Seidel, T. E. and Meek, R. L., in Ion Implantation in Semiconductors and Other Materials; Crowder, , Ed. Plenum Press (1973) p. 305 Google Scholar
5. Tseng, W., Koji, T., Mayer, J. W. and Seidel, T. E., Pppl. Phys. Lett., 33, 442 (1978)Google Scholar
6. Meek, R. L. and Seidel, T. E., J. Phys. Chem. Solids, 36, 731 (1975)CrossRefGoogle Scholar
7. Chou, S. L. and Gibbons, i. F., Jour. Appl. Phys., 46, 3, 1197 (1975)Google Scholar
8. Lecrosnier, D., Paugam, O., Pelous, G., Richous, R., and Salvi, M., Jour. of Appl. Phys., 52, 8, 5090 (1981); see also D. Lecrosnier, J. Paugam, F. Ricou, G. Pelous and F. Beniere, J. Appl. Phys., 51, 1036 (1980)CrossRefGoogle Scholar
9. Seidel, T. E. and Meek, R. L., unpublishedGoogle Scholar
10. Falster, R., Appl. Phys. Lett., 46, 8, 737 (1985)Google Scholar
11. Claeys, C.L., Declerck, G. J. and Overstraeten, R. J. Von in “Semiconductor Characterization Techniques, Eds. Barne, s and Rozgonyi, , The Electrochem. Soc., Princeton, 366 (1978)Google Scholar
12. Bronner, G. B. and Plummer, J. D., Extended Abtstracts, No. 483, The Electrochemical Soc., Vol. 84–2, Oct. 1984 Google Scholar
13. Ourmazd, A. and Schroter, W., Appl. Phys. Letters, 45, 781 (1984)Google Scholar
14. Seidel, T. E., Extended Abstracts, No. 57, The Electrochemical Soc., Vol. 76–1, May 1976 Google Scholar
15. Colas, E. G., Weber, E. R. and Hahn, S., Materials Research Society Fall Mtg., Boston, MA, December 1985, Paper K3.6Google Scholar
16. Cerofolini, G. F. and Ferla, G., Semiconductor Silicon/1981, The Electrochemical Society, Eds. Kriegler, Huff and; also G. F. Cerefolini and M. L. Polignano, J. Appl. Phys., 55, 2 (1984)Google Scholar
17.Introductory Address: Seidel, T. E. and Geipel, H., Gettering Symposium, ECS Ext. Abstr., tos Angeles, CA, Fall, 1975. See also S. Murarka, T. Seidel, j. Dalton, J. Dishman and M. Read, J. Electrochem. Soc., 127, 716 (1980)Google Scholar
18. Tan, T. Y., Gardner, E. F. and Tice, W. K., Appl. Phys. Lett, 30, 175 (1977)CrossRefGoogle Scholar
19. Rozgonyi, G. A., Deysher, R. P. and Pearce, C. W., J. of Electrochem. Soc., 123, 1910 (1976)Google Scholar
20. Isome, S., Aobe, S. and Watanabe, K., J. Appl. Phys., 55, 4, 817 (1983)Google Scholar
21. Jastrebski, L., Soydan, R., McGinn, J., Kleppinger, R., Blumenfeld, M., Gillespie, G., Armour, N., Goldsmith, B., Henry, W., and Verrumba, S., Electrochemical Soc. Mtg., Las Vegas, NV, Ext. Absts., 85-2, October 1975 Google Scholar
22. Matlock, J. H., “Defects in Silicon”, The Electrochem. Soc., 83–9 (1983)Google Scholar
23. Bourret, A., Thibault-Desseaurx, J. and Seidman, D. N., J. Appl. Phys., 55, 825 (1983). See also T. E. Seidel and D. Elwell, Reduced Temperature Processing for VLSI, The Electrochem. Soc., Eds. Reif and Srinivasan, p. 365 (1986)Google Scholar
24. Bergholtz, W., Pirouz, P. and Hutchison, J. L., Proc. 13th Int'l. Conf. Defects in Semiconductors1 (Ed. Kimmerling and Parsey), Met. Soc. AIME, p. 717 (1985)Google Scholar
25. Hahn, S., Shatas, S. C. and Stein, H. J., Mat. Res. Sec., Fall Mtg., Boston, MA, 1985 Google Scholar
26. Bailey, W. F., Bowling, R. A. and Bean, K. E., J. Electrochem. Soc. 132, 7, 1723 (1985)Google Scholar
27. Hahn, S., Wong, C. C. D., Ponce, F. A., and Rek, Z. U., Mat. Res. Soc., Boston, MA, Fall, paper K3.7, December 1985 Google Scholar
28. Yang, K. H. and Tan, T. Y., Mat. Res. Soc. Symp. Proc. 36, 223 (1985)CrossRefGoogle Scholar
29. Huber, D., private communication, 1st Internat. Conf. on Silicon Mat. and Tech., Portland, OR, 1985 Google Scholar
30. Tarro, K., Shimura, F. and Kawamura, T., J. Electrochem Soc., 128 (2) 395 (1981)Google Scholar
31. Medernach, J. W., Wells, V. A. and Witherspoon, L., Semiconductor Silicon/1986, The Electrochem Soc., Eds. Abe, Huff and Kolbesen, p. 915 (1986)Google Scholar
32. Baginski, T. A. and Monkowski, J. R., to be publishedGoogle Scholar
33. Gösele, U. in Semiconductor Silicon/1986, Eds. Abe, Huff and Kolbesen, , The Electrochem. Soc. PV 86-4, Pennington, NJ (1986)Google Scholar
34. Griffin, P. B. and Plummer, J. D. (this volume) MRS, Spring 1985, paper F1.15Google Scholar