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Grain Boundaries in Crystallized Silicon Thin Films

Published online by Cambridge University Press:  15 February 2011

N. M. Johnson,
D. K. Biegelsen and
M. D. Moyer
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
D. K. Biegelsen
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
M. D. Moyer
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

The presence of residual grain boundaries in laser-crystallized thin films of silicon necessitates an understanding of their properties and effects on device operation. In CW laser crystallized silicon islands, lateral p-n junction diodes have been used to evaluate the following: (1) enhanced arsenic diffusion along grain boundaries, (2) current-voltage characteristics, and (3) effects of hydrogenation on diode operation. To study the process of hydrogen passivation, deuterium has been used as a readily identifiable isotope which duplicates hydrogen chemistry. From secondary-ion mass spectrometry, diffusion of deuterium in single-crystal and polycrystalline silicon at low temperatures (e.g., 350 C) clearly demonstrates that grain-boundary diffusion dominates bulk diffusion.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981, 287
Copyright
Copyright © Materials Research Society 1982

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References

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