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Grain Boundary Dislocations in GaAs

Published online by Cambridge University Press:  26 February 2011

D.A. Smith and
W. Krakow
D.A. Smith
Affiliation:
IBM Thomas 1. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598 USA
W. Krakow
Affiliation:
IBM Thomas 1. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598 USA
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Abstract

A preliminary survey of the dislocation structures of grain boundaries in Bridgman grownpolycrystalline GaAs suggests that many of the phenomena observed in grain boundaries inface centered cubic metals, silicon and germanium also occur in boundaries of a polar semiconductor. Our experiments show that low angle grain boundaries are comprised of crystal lattice dislocations and deviations from coincidence orientations are accommodated bysecondary dislocations; specifically, in twins, the a-fringe technique reveals that there are multiple structures where the different domains are separated by partial grain boundary dislocations.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986, 349
Copyright
Copyright © Materials Research Society 1987

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References

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