Hostname: page-component-7b7567c8c-kwt9d Total loading time: 0 Render date: 2026-11-12T06:30:44.129Z Has data issue: false hasContentIssue false
  • English
  • Français

Grain Boundary Passivation in Polycrystalline Silicon : A D.L.T.S. Study

Published online by Cambridge University Press:  15 February 2011

Prakash C. Srivastava and
Jacques C. Bourgoin
Prakash C. Srivastava
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supèrieure, Universitè Paris 7, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France.
Jacques C. Bourgoin
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supèrieure, Universitè Paris 7, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France.
Get access

Abstract

After treatment in a deuterium plasma, the D.L.T.S. spectrum associated with grain boundaries in p–type Si is found to reduce to a narrow band centered at 0.32 ± 0.02 eV with a total density of 5 ⨉ 1015 cm−2 . However, the capture cross-section, measured to be ∼ 2 × 10−20 cm2 , is 10 times larger than the apparent cross-section associated with the states present in unpassivated material.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981, 137
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. For a review on this question see for instance Polycrystalline and amorphous thin films and devices, ed.Kamerski, L.L. (Academic Press, New York, 1980).Google Scholar
2. Chu, T.L., Liu, J.C., Mollenkopf, H.C., Chu, S.C. and Heizer, K.W., Solar Energy 17, 229 (1975).Google Scholar
3. Pankove, J.I., Lampert, M.A. and Targ, M.L., Appl. Phys. Lett. 32, 439 (1978).Google Scholar
4. Seager, C.H. and Ginley, D.S., Appl. Phys. Lett. 34, 337 (1979).Google Scholar
5. Makino, T. and Nakamura, H., Appl. Phys. Lett. 35, 551 (1979).Google Scholar
6. Campbell, D.R., Appl. Phys. Lett. 36, 604 (1980).Google Scholar
7. Benton, J.L., Doherty, C.J., Ferris, S.D., Flamm, D.L., Kimmerling, L.C. and Leamy, H.J., Appl. Phys. Lett. 36, 670 (1980).CrossRefGoogle Scholar
8. Seager, C.H., Ginley, D.S. and Zook, J.D., Appl. Phys. Lett. 36, 831 (1980).Google Scholar
9. Robinson, R.H. and D'Aiello, R.V., Appl. Phys. Lett. 39, 63 (1981).Google Scholar
10. Srivastava, P.C. and Bourgoin, J.C., unpublished.Google Scholar